May 18, 2015 - Mouser Electronics, Inc., the global authorized distributor with the newest semiconductors and electronic components, is now stocking the Gallium Nitride High Electron Mobility Transistor (HEMT) Monolithic Microwave Integrated Circuits (MMICs) fromCree. These new MMICs target X-band and C-band high frequency applications.
The Cree GaN HEMT-based MMICs, available from Mouser Electronics, are high-power high-performance Gallium Nitride transistors. Gallium Nitride (GaN) is a wide bandgap material used for high power high performance semiconductors with electrical characteristics superior to conventional silicon devices, useful in many applications including power conversion systems. High speed GaN devices demonstrate noticeable performance advantages in sensitive radar equipment, satellite radios, and broadband amplifiers.
These new Cree GaN MMIC transistors provide extremely wide signal bandwidths in a very small footprint. Minimum power output is 25 Watts for the Cree CMPA5585025F MMIC for 5.5 to 8.5 GHz C-band communications. The Cree CMPA801B025F MMIC provides 25 Watts for the 8 to 11 GHz X-band frequencies used for radar and communications systems. The high end Cree CMPA601C025F MMIC supports the X-band operating frequencies from 6 GHz up to 12 GHz at 35 Watts. These GaN MMICs are available in screw terminal mountings.
Cree GaN MMIC transistors target high precision, high reliability, high frequency applications such as marine and land-based radar systems, broadband radio amplifiers, point-to-point radio systems, satellite communications including uplinks, and test equipment amplifiers.
To learn more, visit: http://www.mouser.com/new/cree/cree-gan-mmics/.
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