onsemi NTBG022N120M3S 1200V M3S Series SiC (Silicon Carbide) MOSFET is optimized for fast switching applications and offers a low 22mΩ drain-to-source on-resistance. The M3S Series SiC MOSFETs provide optimum performance when driven with an 18V gate drive but also work well with a 15V gate drive. This device features planar technology, which works reliably with a negative gate voltage drive and turns off spikes on the gate. The onsemi NTBG022N120M3S 1200V M3S Series SiC MOSFET is housed in a D2PAK-7L package for low common source inductance.
